Analysis for light emitting diode (LED) by atom probe tomography
The light emission performance of LED with InGaN multiple quantum well (MQW) depends on the condition of crystal growth. Structural analysis of each layer and quantitative analysis for dopant distribution are carried out using TEM and APT.
Quantitative evaluation of MQW layers using TEM and APT
A general view is that an uneven Indium (In) composition causes carrier diffusion in gallium-nitride devices with an InGaN MQW layer, significantly affecting their light-emitting characteristics. TNA offers quantitative evaluation of the MQW layer, including film thickness, In composition, in-plane distribution and variation.
Distribution of magnesium in p-GaN layer
LED has pn diode structure in which active layer of MQW is sandwiched by p and n type semiconductor. Holes are provided through p-type, and electrons are provided through n-type.
Mg is doped as an acceptor in general LED with InGaN MQW structure. It is found that Mg is clustering and distributing locally by APT (analysis).
|APT||Atom Probe Tomography|
|Analysis of Low Interface Resistance in NiSi/Si Junctions by Atom Probe Tomography|
[Last updated: April 18, 2019]