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TOSHIBA NANOANALYSIS CORPORATION

Services

Failure analysis of semiconductor devices, flat-panel displays (FPDs) and electronic components

TNA offers defect isolation and physical analysis services for identifying the cause of an electronic component failure in order to help facilitate product development, increase yield and improve product reliability.

Our service offerings

  • Failure analysis of purchased ICs
  • Failure analysis of power MOSFETs
  • Failure analysis of semiconductor packages
  • Failure analysis of SiC compound semiconductors
  • Failure analysis of on-board components
  • Procedure of failure analysis for semiconductor devices

Failure analysis techniques

 Nondestructive testing

  • Nondestructive test of internal structures using
  •   Transmission X-ray microscope

      Scanning acoustic microscope (SAM)

 Electrical characteristics and fault localization

  • Electrical characterization and fault localization using
  •   Semiconductor parameter analyzer and a curve tracer

      Magnetic microscope

      Optical-beam-induced resistance change (OBIRCH)

      Emission microscope (EMS)

  • Decapping of semiconductor packages using laser, backgriding, chemical processing and dry etching

 Physical analysis

  • Surface grinding, cross-section grinding, etching, and specimen preparation using a focused ion beam (FIB)
  • Layer analysis of ICs
  • Shape observation and energy-dispersive X-ray spectroscopy (EDS) analysis using a scanning electron microscope (SEM) and a transmission electron microscope (TEM)
  • Defect isolation using a passive voltage contrast (PVC) technique
  • Observation of carrier distribution in semiconductor substrates using a scanning capacitance microscope (SCM)

Examples

Defect analysis examples

 Semiconductor devices

  • Analysis of breakdown voltage defects in Schottky barrier and Zener diodes
  • Analysis of leakage defects in IGBTs and power MOSFETs
  • Analysis of open-circuit defects in photocouplers and photodiodes
  • Analysis of electrostatic breakdown in analog ICs, digital ICs, power supply IC and memory devices
  • Identification of open- and short-circuit defects in wiring TEGs
  • Observation of an alloy layer in copper (Cu) bonding

 Printed circuit boards (PCBs)

  • Analysis of short-circuit defects in surface-mount components due to ion migration
  • X-ray imaging and cross-sectional analysis of voids in the solder balls of ball grid array (BGA) packages
  • Analysis of board-level open-circuit defects involving BGA packages
  • Analysis of board-level open-circuit defects involving LEDs
  • Cross-sectional observation of cracks in solder joints

Defect analysis techniques

  • Measurement of nanoscale surface roughness using an atomic force microscope (AFM)
  • Analysis of a compound semiconductor using a 3D atom probe
  • Analysis of contact defects using STEM-EELS
  • Gate leakage observation and crystal grain analysis

Major equipment

  • Transmission X-ray microscope
  • X-ray computed tomography
  • Scanning acoustic microscope (SAM)
  • Optical-beam-induced resistance change (OBIRCH) analysis system
  • Emission microscope (EMS) (Photoemission electron microscope (PEM))
  • Optical microscopes (OMs)
  • Scanning electron microscope (SEM)
  • Transmission electron microscope (TEM)
  • Atomic force microscope (AFM)
  • Scanning capacitance microscope (SCM)
  • Electron probe microanalyzer (EPMA)
  • 3D atom probe (3DAP)
  • Focused ion beam (FIB) milling system
  • Cross-section and surface grinders, cutting machine

Optical-beam-induced resistance change (OBIRCH) system, emission microscope (EMS) (photoemission electron microscope: PEM) Optical-beam-induced resistance change (OBIRCH) system, emission microscope (EMS) (photoemission electron microscope: PEM)

Defect isolation using a optical-beam-induced resistance change (OBIRCH) analysis system
Defect isolation using a optical-beam-induced resistance change (OBIRCH) analysis system

Observing a cross-sectional view of an identified defect in a diffusion layer using an SCM
Observing a cross-sectional view of an identified defect in a diffusion layer using an SCM

Observing a cross-sectional view of an identified defect using a TEM / Enlarged view Observing a cross-sectional view of an identified defect using a TEM / Enlarged view

Observing the alloy layer in a Cu wireObserving the alloy layer in a Cu wire

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