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TOSHIBA NANOANALYSIS CORPORATION

Services

Surface Element Analysis

TNA offers analysis services that analyze the chemical composition, bonding states and impurity profiles on the surface to provide information that will benefit your R&D, manufacturing process and failure analysis.

Our service offerings

  • Pre-treatment for surface analysis (low-angle cutting, backgrinding)
  • Analysis of the elemental composition and state on the surface
  • Analysis of element profile on the surface
  • Analysis of compounds on the surface
  • Depth profiling of the composition and bonding state of thin films
  • Depth profiling of impurities in thin films
  • Band gap measurement

Examples

  • Depth profile and chemical analysis of a magnetic metal multilayer film
  • HAXPES (hard X-ray photoelectron spectroscopy) of a deep layer interface using synchrotron radiation/laboratory-level X-ray
  • Impurity analysis of a gate electrode and an oxide interface (Backside XPS)
  • Band gap analysis of a high-k film (HfSiox film) (REELS)
  • Surface analysis of aluminum (Al) pads of a semiconductor chip
  • Evaluation of an interface reaction layer of a stack (AES)
  • Evaluation of a reaction layer at the interface between solder and a Cu leadframe using EPMA
  • Depth profiling of impurities in a silicon substrate
  • SIMS analysis using a backgrinding technique (Backside SIMS)
  • Evaluation of an ultra-shallow ion implantation profile using low-energy SIMS
  • Evaluation of the B delta-doped layer in a silicon (Si) layer using ultra-low-energy secondary ion mass spectrometry (SIMS)
  • SIMS profiles of accurate depth calibration
  • Effect of the Mesa method on SIMS profiling
  • Depth profiling of the additives in a semiconductor photoresist polymer using a high-precision low-angle cutting technique
  • Structural analysis of an LCD multilayer film using a high-precision low-angle cutting technique(TOF-SIMS)
  • Depth and state profiling of a multilayer metal film(XPS, SIMS, rf-GD-OES)
  • Surface analysis of the electrodes for a rechargeable lithium-ion battery
  • Evaluation of the cross-sectional distribution of medicinal substances in a tablet

Major equipment

  • rf-glow discharge optical emission spectroscopy (rf-GD-OES)
  • X-ray photoelectron spectroscope (XPS)
  • Auger Electron Spectroscope (AES)
  • Electron probe microanalyzer (EPMA)
  • Secondary ion mass spectrometer (SIMS)
    • Quadrupole secondary ion mass spectrometer
      (Quadrupole SIMS)
    • Ultra-low-energy secondary ion mass spectrometer
      (Ultra-low-energy SIMS)
    • High-mass-resolution magnetic sector secondary ion mass spectrometer
    • Time-of-flight secondary ion mass spectrometer (TOF-SIMS)
  • Reflection electron energy loss spectrometer (REELS)

X-ray photoelectron spectroscope (XPS)X-ray photoelectron spectroscope (XPS)

Secondary ion mass spectrometer (SIMS)Secondary ion mass spectrometer (SIMS)

Field-emission scanning Auger electron microscope (FE-AES)Auger Electron Spectroscopy(AES)

Time-of-flight secondary ion mass spectrometer (TOF-SIMS) (Photomasks, 300-mm wafers)Time-of-flight secondary ion mass spectrometer (TOF-SIMS) (Photomasks, 300-mm wafers)

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