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TOSHIBA NANOANALYSIS CORPORATION

Services

Nanostructure analysis

Drawing on its advanced analysis technologies and equipment, TNA supports the R&D for next-generation products requiring nano-precision evaluation.

Our service offerings

3-dimensional(3D) elemental analysis

  • 3D surface and interface element mapping using atom probe tomography (APT)

Shape observation

  • Nanoscale length measurement using transmission electron microscope (TEM)
  • Cross-sectional observation using transmission electron microscopes (TEM/STEM)
  • 3D surface shape observation using scanning probe microscope (SPM)
  • Ultra-shallow shape observation using ultra-low- accelerating voltage scanning electron microscope(ULV-SEM)

Nanostructure analysis

  • Surface structure analysis using X-ray diffraction (XRD)
  • Nanoscale structural analysis via electron beam diffraction using transmission electron microscope (TEM)

Elemental analysis

  • Electron energy-loss spectroscopy (EELS) analysis (TEM/STEM)
  • Energy dispersive X-ray spectroscopy (EDS) analysis (TEM/STEM)

Nanofabrication

  • Fabrication of thin films for high-quality TEM observation using focused ion beam (FIB)
  • Fabrication of probes for high-quality APT using focused ion beam (FIB)

Examples

  • Analysis for light emitting diode (LED) by atom probe tomography
  • Atomic level analysis by atom probe tomography
  • Analysis of a driving magnet using atom probe tomography
  • Analysis of an LED phosphor using atom probe tomography and electron probe microanalyzer (EPMA)
  • Analysis of Low Interface Resistance in NiSi/Si Junctions by atom probe tomography
  • Nano scale analysis for 3D semiconductor device
  • Measurement of wire and device lengths in semiconductor products using TEM
  • Direct observation of faults (dislocations and deposits) in semiconductor products using TEM and STEM
  • Elemental analysis of faults in semiconductor products using EDS (TEM/STEM)
  • Elemental analysis of faults in semiconductor products using EELS (TEM/STEM)
  • Defect analysis using STEM-EELS
  • Evaluation of nano-range distortion distribution using nano-beam diffraction (NBD)
  • Cross-sectional analysis of flat-panel displays (FPDs) using TEM and STEM
  • Microstructure analysis of carbon and other materials using TEM
  • Mapping of dopant segregation at the semiconductor silicide interface using APT
  • Utilization of bright and dark fields of TEM micrographs: Gate leakage observation and crystal grain analysis
  • Backside processing method using focused ion beam (FIB)
  • Low-damage ion beam processing
  • Degradation analysis of LiCoO2 cathodes using TEM measurement

Major equipment

  • Dicing saw
  • Focused ion beam (FIB) milling system
  • Optical microscope (OM)
  • Scanning electron microscope (SEM)
  • Ultra low accelerating voltage scanning electron microscope (ULV-SEM)
  • Transmission electron microscope (TEM)
  • Scanning transmission electron microscope (STEM): Supports high-angle annular dark-field (Z-contrast) imaging
  • Scanning probe microscope (SPM)
  • X-ray diffraction (XRD)
  • Electron energy-loss spectroscopy (EELS) and Energy dispersive X-ray spectroscopy (EDS) analysis (TEM/STEM)
  • Atom probe tomography (APT)

3D atom probe (3DAP)
Atom Probe Tomography (APT)

Concentration profile at the nickle silicide interface * Specimen provided by Toshiba Semiconductor & Storage Products Company
Concentration profile at the nickel silicide interface * Specimen provided by Toshiba Semiconductor & Storage Products Company

Transmission electron microscope (TEM)
Transmission electron microscope (TEM)

FIB image
FIB image

Cross-sectional TEM analysis
Cross-sectional TEM analysis

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